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Triggered Indistinguishable Single Photons with Narrow Line Widths from Site-Controlled Quantum Dots

Identifieur interne : 000284 ( Main/Repository ); précédent : 000283; suivant : 000285

Triggered Indistinguishable Single Photons with Narrow Line Widths from Site-Controlled Quantum Dots

Auteurs : RBID : Pascal:13-0158773

Descripteurs français

Pascal (Inist)
- Largeur raie, Point quantique, Nanomatériau, Composé III-V, Semiconducteur III-V, Mode empilement, Structure cristalline, Intégration LSI, Arséniure d'indium, Arséniure de gallium, GaAs, 8107T, 8535B, 8107B, 6146.

English descriptors

KwdEn :
- Crystal structure, Gallium arsenides, III-V compound, III-V semiconductors, Indium arsenides, Large scale integration, Line widths, Nanostructured materials, Quantum dots, Stacking sequence.

Abstract

In this Letter, we present narrow line width (7 μeV), nearly background-free single-photon emission (g⁽²⁾(0) = 0.02) and highly indistinguishable photons (V = 0.73) from site-controlled In(Ga)As/GaAs quantum dots. These excellent properties have been achieved by combining overgrowth on ex situ pit-palterned substrates with vertical stacking of spectrally distinct quantum dot layers. Our study paves the way for large-scale integration of quantum dots into quantum photonic circuits as indistinguishable single-photon sources.

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Pascal:13-0158773

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Triggered Indistinguishable Single Photons with Narrow Line Widths from Site-Controlled Quantum Dots

Triggered Indistinguishable Single Photons with Narrow Line Widths from Site-Controlled Quantum Dots

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri